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MRF9080LR3 1 rf device data freescale semiconductor rf power field effect transistor n - channel enhancement - mode lateral mosfet designed for gsm 900 mhz frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. ? typical performance for gsm frequencies, 960 mhz, 26 volts output power @ p1db: 75 watts power gain @ p1db: 18.5 db efficiency @ p1db: 55% ? capable of handling 5:1 vswr, @ 26 vdc, 921 mhz, 90 watts cw output power features ? internally matched for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 250 1.43 w w/ c storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 0.7 c/w table 3. esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) document number: mrf9080 rev. 8, 10/2008 freescale semiconductor technical data MRF9080LR3 920 - 960 mhz, 75 w, 26 v lateral n - channel rf power mosfet case 465 - 06, style 1 ni - 780 lifetime buy last order 3 oct 08 last ship 14 may 09 ? freescale semiconductor, inc., 2008. all rights reserved.
2 rf device data freescale semiconductor MRF9080LR3 table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vds, v gs = 0) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 ) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 300 adc) v gs(th) 2.0 ? 4.0 vdc gate quiescent voltage (v ds = 26 vdc, i d = 700 madc) v gs(q) ? 3.7 ? vdc drain - source on - voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.19 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 6 adc) g fs ? 8.0 ? s dynamic characteristics (1) output capacitance (v ds = 26 vdc, v gs = 0, f = 1 mhz) c oss ? 73 ? pf reverse transfer capacitance (v ds = 26 vdc, v gs = 0, f = 1 mhz) c rss ? 2.9 ? pf functional tests (in freescale test fixture, 50 ohm system) power output, 1 db compression point (v dd = 26 vdc, i dq = 600 ma, f = 960 mhz) p 1db 68 75 ? w common - source amplifier power gain @ 70 w (min) (v dd = 26 vdc, i dq = 600 ma, f = 960 mhz) g ps 17 18.5 20 db drain efficiency @ p out = 70 w (v dd = 26 vdc, i dq = 600 ma, f = 960 mhz) 1 47 52 ? % drain efficiency @ p1db (v dd = 26 vdc, i dq = 600 ma, f = 960 mhz) 2 ? 55 ? % input return loss (v dd = 26 vdc, p out = 70 w, i dq = 600 ma, f = 960 mhz) irl 9.5 12.5 ? db 1. part is internally input matched. lifetime buy last order 3 oct 08 last ship 14 may 09
MRF9080LR3 3 rf device data freescale semiconductor figure 1. broadband gsm 900 test circuit schematic v gg v dd c6 + rf input r1 c5 r2 r3 c4 + c3 c9 c2 c1 c8 c7 dut c11 c12 rf output c15 c10 c13 c14 c16 c17 c18 table 5. broadband gsm 900 test circuit component designations and values part description part number manufacturer c1 4.7 pf chip capacitor atc100b4r7bt500xt atc c2 2.7 pf chip capacitor atc100b2r7bt500xt atc c3 1.5 pf chip capacitor atc100b1r5bt500xt atc c4, c5, c9, c10, c12, c13 5.6 pf chip capacitors atc100b5r6ct500xt atc c6, c16, c17 22 pf chip capacitors atc100b220gt500xt atc c7, c18 10 f, 35 v tantalum chip capacitors t491d106m035at kemet c8, c11 10 pf chip capacitors atc100b100jt500xt atc c14 0.8 pf chip capacitor atc100b0r8bt500xt atc c15 8.2 pf chip capacitor atc100b8r2gt500xt atc r1, r2, r3 1.0 k , 1/8 w chip resistors crcw08051001fkea vishay raw pcb material 30 mil glass teflon ? , r = 2.55 tlx8 - 0300 taconic lifetime buy last order 3 oct 08 last ship 14 may 09
4 rf device data freescale semiconductor MRF9080LR3 figure 2. broadband gsm 900 test circuit component layout mrf9080 c3 v gg rf output rf input v dd c1 c2 c4 c5 c6 c7 c8 c9 c10 c11 c12 c13 c14 c15 c16 c17 c18 r1 r2 r3 wb1 wb2 cut out area freescale has begun the transition of marking printed circuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product. lifetime buy last order 3 oct 08 last ship 14 may 09
MRF9080LR3 5 rf device data freescale semiconductor figure 3. broadband gsm 900 optimized demo board schematic v gg v dd c6 + rf input u1 r1 c5 r2 p1 r3 r4 t1 c4 + c3 c9 + c2 c1 c8 c7 dut r5 r6 c11 c12 rf output c15 c10 c13 c14 table 6. broadband gsm 900 optimized demo board component designations and values part description part number manufacturer c1 4.7 pf chip capacitor, accu - p 08051j4r7cbs avx c2 3.9 pf chip capacitor, accu - p 08051j3r9cbs avx c3, c15 22 pf chip capacitors, accu - p 08051j221cbs avx c4, c6 22 f, 35 v tantalum chip capacitors t491x226k035as kemet c5 1 f chip capacitor, accu - p 08053105 avx c7, c8 5.6 pf chip capacitors, accu - p 08051j5r6cbs avx c9 220 f, 63 v electrolytic capacitor 2222 - 136 - 68221 vishay c10, c11 3.3 pf chip capacitors, accu - p 08051j3r3cbs avx c12, c13 2.2 pf chip capacitors, accu - p 08051j2r2cbs avx c14 4.7 pf chip capacitor atc100b4r7jt500xt atc p1 5.0 k potentiometer cms cermet multi - turn 3224w bourns r1 10 , 1/8 w chip resistor crcw080510r0fkea vishay r2, r5, r6 1 k , 1/8 w chip resistor crcw08051001fkea vishay r3 1.2 k , 1/8 w chip resistor crcw08051201fkea vishay r4 2.2 k , 1/8 w chip resistor crcw08052201fkea vishay t1 bipolar npn transistor, sot - 23 bc847alt1g on semiconductor u1 voltage regulator, micro - 8 lp2951acdmr2g on semiconductor substrate = taconic rf35, thickness 0.5 mm lifetime buy last order 3 oct 08 last ship 14 may 09
6 rf device data freescale semiconductor MRF9080LR3 figure 4. broadband gsm 900 optimized demo board component layout mrf9080 c5 r1 u1 p1 r3 t1 r4 r2 c4 c3 c2 c1 r6 r5 c7 c6 c9 c8 c11 c12 c10 c13 c14 c15 v bias ground v supply freescale has begun the transition of marking printed circuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product. lifetime buy last order 3 oct 08 last ship 14 may 09
MRF9080LR3 7 rf device data freescale semiconductor typical characteristics (in freescale broadband gsm 900 optimized demo board) 0 5 10 15 20 25 30 35 p in , input power (watts) figure 5. power gain versus output power f, frequency (mhz) figure 6. power gain versus output power figure 7. power gain and input return loss versus frequency p in , input power (watts) p out , output power (watts) figure 8. output power and efficiency versus input power figure 9. power gain versus output power g ps , power gain (db) , drain efficiency (%) p out v dd = 26 vdc i dq = 600 ma f = 940 mhz p out , output power (watts) 850 870 1010 p out = 20 w 15 16 17 18 19 20 21 0.2 0 1 1.2 16 18 19 20 1 10 100 17 p out , output power (watts) g ps , power gain (db) 1 10 100 17 18 19 20 21 p out , output power (watts) g ps , power gain (db) 1 10 100 17 18 19 20 figure 10. output power and efficiency versus input power g ps , power gain (db) , drain efficiency (%) p out , output power (watts) 800 ma i dq = 1000 ma v dd = 26 vdc f = 940 mhz t = 25 c 600 ma 400 ma i dq = 600 ma f = 940 mhz t = 25 c v dd = 22 vdc 30 vdc 26 vdc v dd = 26 vdc i dq = 600 ma t = 25 c g ps irl 70 w p out = 20 w 70 w 890 910 930 950 970 990 1030 1050 ?30 ?25 ?20 ?15 ?10 ?5 0 0 10 20 30 40 50 60 irl, input return loss (db) v dd = 26 vdc i dq = 600 ma f = 940 mhz t = 25 c 120 110 100 90 80 70 60 50 40 30 20 10 0 1.4 1.6 1.8 0.4 0.6 0.8 v dd = 26 vdc i dq = 600 ma f = 940 mhz 25 c 50 c 85 c 110 100 90 80 70 60 50 40 30 20 10 0 0.2 0 1 1.2 1.4 1.6 1.8 0.4 0.6 0.8 p out 25 c 85 c 25 c 85 c 40 45 50 55 lifetime buy last order 3 oct 08 last ship 14 may 09
8 rf device data freescale semiconductor MRF9080LR3 figure 11. series equivalent source and load impedance f mhz z source z load 880 920 960 0.91 - j2.11 1.6 - j2.61 0.88 - j2.65 1.22 - j0.12 1.00 - j0.16 1.22 - j0.22 v dd = 26 v, i dq = 600 ma, p out = 90 w cw 1000 2.45 - j3.38 1.14 - j0.41 f = 1000 mhz z o = 10 f = 880 mhz f = 880 mhz f = 1000 mhz z source z load z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network lifetime buy last order 3 oct 08 last ship 14 may 09
MRF9080LR3 9 rf device data freescale semiconductor package dimensions MRF9080LR3 ni - 780 case 465 - 06 issue g notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.772 0.788 19.60 20.00 q .118 .138 3.00 3.51 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h s f s 0.365 0.375 9.27 9.52 m 0.774 0.786 19.66 19.96 aaa 0.005 ref 0.127 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m aaa b m t (insulator) r m a m ccc b m t (lid)
10 rf device data freescale semiconductor MRF9080LR3 product documentation refer to the following documents to aid your design process. engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 8 oct. 2008 ? data sheet revised to reflect part status change, p. 1, including use of applicable overlay. ? modified data sheet to reflect rf test reduction described in product and process change notification number, pcn12779, p. 1, 2 ? updated part numbers in tables 5 and 6, component designations and values, to rohs compliant part numbers, p. 3, 5 ? added product documentation and revision history, p. 10
MRF9080LR3 11 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 fax: +1 - 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf9080 rev. 8, 10/2008

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